2N6667

Specifications

2N6667
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2N6667                                                                                                                             

The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.

 

Features:

•High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc

•Collector-Emitter Sustaining Voltage @ 200 mAdc VCEO(sus) = 60 Vdc (Min) 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668

•Low Collector-Emitter Saturation Voltage VCE(sat) = 2 Vdc (Max) @ IC = 5 A

•Monolithic Construction with Built-In Base-Emitter Shunt Resistors

•TO-220AB Compact Package

•Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic

 

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