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Home > Electrical & Electronics > Electronic Tube & Transistor > Triode > IRF3315 Infineon Technologies MOSFET N-CH 150V 27A TO220AB
US$ 0.3 - 2
MOQ: 1 Piece
Key Specifications
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Brand Name:
Infineon Technologies
Place of Origin:
China
Model Number:
IRF3315
Payment & Shipping
Payment Methods:
Port of Shipment:
Shenzhen
Delivery Detail:
7 days
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Brand Name
Infineon Technologies
Place of Origin
China
Model Number
IRF3315
Type
Other, MOSFET
Package Type
Throught Hole
IRF3315
Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
70mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
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Business Type
Trading Company
Year Established
2011
Annual Export Value
US$5 Million - US$10 Million
Port of Shipment
Shenzhen
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