SI2319DS-T1-E3 Vishay Semiconductors MOSFET 40V 3.0A 1.25W 82 Mohms @ 10V

SI2319DS-T1-E3

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: SOT-23-3

Transistor Polarity: P-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 40 V

Id - Continuous Drain Current: 3 A

Rds On - Drain-Source Resistance: 82 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V

Qg - Gate Charge: 17 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 1.25 W

Channel Mode: Enhancement

Tradename: TrenchFET

Series: SI2

Packaging: Reel

Packaging: Cut Tape

Packaging: MouseReel

Brand: Vishay Semiconductors

Configuration: Single

Fall Time: 25 ns

Forward Transconductance - Min: 7 S

Height: 1.45 mm

Length: 2.9 mm

Product Type: MOSFET

Rise Time: 15 ns

factory pack quantity: 3000

Subcategory: MOSFETs

Transistor Type: 1 P-Channel

Typical Turn-Off Delay Time: 25 ns

Typical Turn-On Delay Time: 7 ns

Width: 1.6 mm

Part # Aliases: SI2319DS-T1-BE3 SI2319DS-E3

Unit Weight: 0.000282 oz