NCE N-Channel Enhancement Mode Power MOSFET NCE0102B
Negotiable
/ Unit
3000 Units(Min.Order)
- 1000000 Unit / Units per Month
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Product Details
| Brand Name | NCEPower | Model Number | NCE0102B |
Product Description
Description
The NCE0102B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 1.8A RDS(ON) <680mΩ @ VGS=10V (Typ:530mΩ) RDS(ON) <700mΩ @ VGS=4.5V (Typ:580mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Contact Us
- Shenzhen haifuli Electronics Co., Ltd
- Contact nameAlina Chat Now
- AddressChuangye Road, Nanshan District, Shenzhen, Shenzhen, Guangdong
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| Digital Isolator | EEPROM | Three Phase | Energy Meter |
| Fuse | IGBT | MOSFET | Sensor |
| Module | MCU |
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