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Home > Products > MOSFET > NCE N-Channel Super Trench II Power MOSFET NCEP026N10T

NCE N-Channel Super Trench II Power MOSFET NCEP026N10T

FOB Price

Negotiable / Unit

3000 Units(Min.Order)

Supply Ability 1000000 Unit / Units per Month

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Product Details

Brand Name:

NCEPower

Model Number:

NCEP026N10T

Product Description

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

General Features

● VDS =100V,ID =230A RDS(ON)=2.15mΩ , typical@VGS=10V

● Excellent gate charge x RDS(on) product(FOM)

● Very low on-resistance RDS(on)

● 175 °C operating temperature

● Pb-free lead plating

Application

●DC/DCConverter

●Ideal for high-frequency switching and synchronous rectification

Contact Us

Shenzhen haifuli Electronics Co., Ltd: Contact nameAlina
Chat Now; AddressChuangye Road, Nanshan District, Shenzhen Shenzhen,Guangdong

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Digital Isolator	EEPROM	Three Phase	Energy Meter
Fuse	IGBT	MOSFET	Sensor
Module	MCU

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NCE N-Channel Super Trench II Power MOSFET NCEP026N10T

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